Returning to Dominate The World With My Knowledge System
Chapter 60: Creating the Memory DRAM

Chapter 60: Chapter 60: Creating the Memory DRAM

Tyler woke up earlier than usual, his mind already racing with calculations and blueprints before he’d even sat up in bed.

Today would see the start of the next phase of his plan; creating the memory subsystem.

After completing his usual routine, he made his way down to the cafeteria for breakfast. He ate quickly but thoroughly.

Unlike the earlier days when hunger tore through him due to system-enhanced metabolism and forced him to wolf down his food, he took his time with his breakfast today.

Twenty minutes later, he was done and the convoy rolled out, the same SUV leading with the crew van trailing behind. They arrived at the fabrication plant just past eight.

To Tyler’s mild surprise qnd equal inward approval, the workers had already gathered in front of the hotel, waiting for him.

They didn’t seem impatient. If anything, they looked curious and quietly motivated.

Arriving at the fab, Tyler stepped out of the car and gave them a brief nod before gathering them near the workstation hub.

Everyone already knew something big was coming when they saw this.

Yesterday, they’d completed the GPU chips. Ten Valkyrie-X units, each with power that dwarfed the bleeding edge of current tech.

But none of them had been sent home yet. They suspected, rightly, that Tyler had more in store.

And besides, if he’d intended to dismiss them, he wouldn’t have offered such generous salaries.

The lowest-paid among them—some of the junior technicians—were earning $55,000 annually.

For a low-scale startup in a barely converted lab in Central Africa, that was more than double what equivalent roles paid even in major U.S. cities.

On average, junior fab technicians in mid-sized companies barely cleared $30k–$35k. And as for specialists? They might breach $60k—but that came with years of experience and location premiums.

But here? One of the lithography handlers from Brazil was earning $105,000, and he had only signed on five days ago.

That number alone said everything. This made them understand that this wasn’t a temporary gig.

Tyler stood before his team with his laptop in his hand. He placed it on a free table and turn it on.

While he waited for it to boot, he turned to everyone and started talking.

"Today we’re building DRAM," he said, looking at carefully at their faces.

He saw the looks immediately, filled with curiosity, uncertainty and intrigue.

"I know most of you specialize in wafers, etching, photolithography. DRAM isn’t exactly in your lane. That’s fine. I expected that. That’s why I’ll be walking you through the architecture myself... and I’ll be modifying the fab units so the process works with our custom standard."

Hearing this, their interest was piqued immediately.

Tyler turned to his laptop which had already booted. He opener the schematic drawing program.

The schematic design of the DRAM was now on full display and Tyler could start his explanation.

The image showed a stack of wafer-thin silicon blocks connected with microscopic lines.

"This," Tyler said, "is our memory architecture. It’s called a 3D Stacked DRAM Array. We’re using Through-Silicon Via, or TSV, tech to make it possible."

He tapped a key and zoomed in, highlighting the vertical copper micro-wires drilled through each stacked layer.

"We’re layering dozens of etched memory cell arrays on top of one another. Each slice is a separate processing layer.

TSVs connect them vertically. Think of them like elevator shafts connecting floors in a skyscraper. This architecture allows vertical density without spreading out."

He flicked to the next slide.

"Each stack will hold 16 terabytes. Four stacks per tower and that gives us 64TB per node."

Murmurs went up and some eyebrows raised.

One of the engineers raised a hand. "We’re talking about supercomputer-class memory density."

Tyler nodded. "Correct. Now, here’s how we get there."

The next projection zoomed into one slice of the stack.

"No capacitors," Tyler said. "We’re not doing traditional DRAM cells. We’re going with capacitor-less cells using Z-RAM principles—Zero-capacitor RAM."

He circled a highlighted area. "These cells store charge using the floating-body effect on a Silicon-On-Insulator substrate. It allows us to cram more bits per area while eliminating capacitor charge bleed and refresh rate limits."

One of the technicians whistled in a low voice. "That’s cutting-edge. Nobody’s using that in real industry yet."

"I know," Tyler said calmly.

A few smiles broke out.

Tyler turned to his laptop and tapped again and the display rotated.

"Each unit will include its own embedded memory controller. These are tiny CPUs that will handle error correction, routing, bandwidth modulation, and internal buffering. That frees whatever program we will be running on it from having to manage that manually."

Then came the final layer.

"For redundancy," Tyler said. "Every DRAM stack includes a parity tier. When the system writes data, it automatically distributes it into two mirrored arrays. Think of it like a RAID-1 storage protocol, but for memory."

One of the techs raised an eyebrow. "That’ll cost bandwidth."

Tyler nodded. "It will. But it increases reliability, stability, and correction speed. If we lose a memory node or have bit errors, the program won’t crash. It’ll just switch access."

He let the projection fade out.

"I’ve already modified the deposition and layering machines. You’ll follow the new templates, and I’ll be with you during fabrication. First few hours might be slow. That’s expected. So, no rush."

Silence followed, then nods as everyone immediately got to work.

Tyler moved between groups as the process began. Some worked on aligning the photolithographic masks for the stacked cell etching.

Others calibrated the TSV laser drill paths. He oversaw the etching stage directly, ensuring the vertical vias didn’t misalign under temperature variance.

The Z-RAM layout took more time. Tyler walked one of the engineers through the floating-body transistor behavior using a real-time simulation, showing the charge-retention model and leakage minimization.

More than once, he had to correct someone’s approach. Once, a staffer used too much insulator spacing on the SOI substrate. Tyler caught it instantly, explained the heat dissipation curve, and adjusted the template.

An hour passed and finally, one DRAM stack emerged from the bonding chamber.

It was beautiful, slim, dense, perfectly patterned.

Tyler ran a quick inspection using the fab’s error-mapping laser.

And he found zero faults.

One of the engineers blinked at the reading.

"No warping or internal faults on the first run?"

Tyler nodded, smiling.

"Let’s test it "

They immediately slotted it into a diagnostic tray and ran a density, access latency, and leakage test.

To their relief, it passed every one.

First node: 16.01 TB usable, with <0.003% charge bleed over time.

Everyone in the room grinned like kids seeing magic for the first time.

As for Tyler? He was smiling from ear to ear.

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